Ads
related to: silicon diode specification sheet pdf
Search results
Results From The WOW.Com Content Network
1N400x rectifier diode. The 1N400x (or 1N4001 or 1N4000 [1]) series is a family of popular one- ampere general-purpose silicon rectifier diodes commonly used in AC adapters for common household appliances. Its blocking voltage varies from 50 volts (1N4001) to 1000 volts (1N4007). This JEDEC device number series is available in the DO-41 axial ...
The 1N4148 is a standard silicon switching signal diode. It is one of the most popular and long-lived switching diodes because of its dependable specifications and low cost. Its name follows the JEDEC nomenclature. The 1N4148 is useful in switching applications up to about 100 MHz with a reverse-recovery time of no more than 4 ns.
A semiconductor device is an electronic component that relies on the electronic properties of a semiconductor material (primarily silicon, germanium, and gallium arsenide, as well as organic semiconductors) for its function. Its conductivity lies between conductors and insulators. Semiconductor devices have replaced vacuum tubes in most ...
In LEDs, transparent epoxy or a silicon caulk-like material that may contain a phosphor is poured into a mold containing the LED(s) and cured. The mold forms part of the package. COF: Chip-on-flex: Variation of COB, where a chip is mounted directly to a flex circuit. Unlike COB, it may not use wires nor be covered with epoxy, using underfill ...
Metal rectifier. A metal rectifier is an early type of semiconductor rectifier in which the semiconductor is copper oxide, germanium or selenium. They were used in power applications to convert alternating current to direct current in devices such as radios and battery chargers. Westinghouse Electric was a major manufacturer of these rectifiers ...
A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current -controlling device. The name "silicon controlled rectifier" is General Electric 's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell ...
The DIAC ( diode for alternating current) is a diode that conducts electrical current only after its breakover voltage, V BO, has been reached momentarily. Three, four, and five layer structures may be used. [1] Behavior is similar to the voltage breakdown of a triac without a gate terminal. When breakdown occurs, internal positive feedback ...
Cross section of 2N2222 in metal TO-18 package, showing connection wires between external pins and die. The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds.
Ads
related to: silicon diode specification sheet pdf